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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3402
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3402 is N-Channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3402 2SK3402-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z)
FEATURES
* Low On-State Resistance RDS(on)1 = 15 m MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 22 m MAX. (VGS = 4.0 V, ID = 18 A) * Low Ciss : Ciss = 3200 pF TYP. * Built-in Gate Protection Diode * TO-251/TO-252 package
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
60 20 36 144 40 1.0 150 -55 to +150 35 123
V V A A W W C C A mJ (TO-252)
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D14473EJ3V1DS00 (3rd edition) Date Published October 2004 NS CP(K) Printed in Japan
The mark shows major revised points. 1999, 2000
2SK3402
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 60 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 18 A VGS = 10 V, ID = 18 A VGS = 4.0 V, ID = 18 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 30 V, ID = 18 A VGS = 10 V RG = 10
MIN.
TYP.
MAX. 10 10
UNIT
A A
V S
1.5 13
2.0 27 12 15 3200 520 270 36 310 170 180
2.5
Drain to Source On-state Resistance
15 22
m m pF pF pF ns ns ns ns nC nC nC V ns nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = 48 V VGS = 10 V ID = 36 A IF = 36 A, VGS = 0 V IF = 36 A, VGS = 0 V di/dt = 100 A/s
61 8.2 17 1.0 48 89
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS VGS 0 Starting Tch = 1 s Duty Cycle 1% ID
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L VDD PG.
D.U.T. RL VGS VGS
Wave Form
50
RG
0
10%
VGS
90%
VDD ID
90% 90%
IAS ID VDD
ID
0 10% 10%
td(on) ton
tr
td(off) toff
tf
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet D14473EJ3V1DS
2SK3402
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
70
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
100 80 60 40 20 0
60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160
0
20
40
60
80
100
120 140 160
Tch - Channel Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 1000 ID(pulse)
10
10
tio
ID - Drain Current - A
100
d ite ) im 10 V )L (on S = S ID(DC) RD t VG (a
PW
=
10
1m
ms
10
DC Po Lim wer ite Diss d ipa
s
0
s
s
n
1 TC = 25C Single Pulse 0.1 0.1 1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 125C/W
10 Rth(ch-C) = 3.13C/W 1
0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D14473EJ3V1DS
3
2SK3402
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 200 Pulsed 160
FORWARD TRANSFER CHARACTERISTICS 100 Pulsed
ID - Drain Current - A
1
TA = -55C 25C 75C 150C
ID - Drain Current - A
10
120 VGS = 10 V 80 4.0 V 40
0.1
0.01
1
2
3
4
VDS = 10 V 5 6
0
0
1
2
3
4
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
100
VDS = 10 V Pulsed
RDS(on) - Drain to Source On-state Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50
40
10 TA = 150C 75C 25C -55C
30
1
20 ID = 18 A 10
0.1
0.01 0.01
0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate to Source Voltage - V
0.1
1
10
100
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 Pulsed 35 30 25 20 VGS = 4.0 V 15 10 5 0 1 10 100 1000 ID - Drain Current - A 10 V
VGS(th) - Gate to Source Threshold Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 3.0 VDS = 10 V ID = 1 mA 2.5 2.0 1.5 1.0 0.5 0
-50
0
50
100
150
Tch - Channel Temperature - C
4
Data Sheet D14473EJ3V1DS
2SK3402
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 30 25 20 15 10 5 0 ID = 18 A -50 0 50 100 150 VGS = 4.0 V 10 V Pulsed
ISD - Diode Forward Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 Pulsed
100 VGS = 10 V 10 VGS = 0 V
1
0.1 0
0.5
1.0
1.5
Tch - Channel Temperature - C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
VF(S-D) - Body Diode Forward Voltage - V
SWITCHING CHARACTERISTICS 1000
td(on), tr, td(off), tf - Switching Time - ns
10000
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 V f = 1 MHz Ciss
tr tf td(off)
1000 Coss Crss 100
100 td(on)
10
10 0.1
1
10
100
1 0.1
1
10
100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000
trr - Reverse Recovery Time - ns
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80
VDS - Drain to Source Voltage - V
70 60 50 40 30 20 10 0 0 ID = 36 A 10 20 30 40 50 60 70 VDS VDD = 48 V 30 V 12 V VGS
14 12 10 8 6 4 2 80
100
10
1 0.1
1
10
100
IF - Drain Current - A
QG - Gate Charge - nC
VGS - Gate to Source Voltage - V
di/dt = 100 A/s VGS = 0 V
16
Data Sheet D14473EJ3V1DS
5
2SK3402
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100
IAS - Single Avalanche Current - A
SINGLE AVALANCHE ENERGY DERATING FACTOR 160
VDD = 30 V RG = 25 VGS = 20 0 V IAS 35 A
IAS = 35 A
=1 23 m
Energy Derating Factor - %
EAS
140
10
J
120 100 80 60 40 20
1 VDD = 30 V RG = 25 VGS = 20 0 V 100 1m 10 m L - Inductive Load - H
0.1 10
0 25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D14473EJ3V1DS
2SK3402
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3) 2) TO-252 (MP-3Z)
1.5-0.1
+0.2
6.50.2 5.00.2 4
1.60.2
2.30.2 0.50.1
0.8 4.3 MAX.
6.50.2 5.00.2 4
1.5-0.1
+0.2
2.30.2 0.50.1
5.50.2
1
2
3
13.7 MIN.
7.0 MIN.
1
2
3
1.10.2
+0.2
0.5-0.1
2.3 2.3
0.75
0.5-0.1
1.Gate 2.Drain 3.Source 4.Fin (Drain)
+0.2
0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
0.7
1.10.2
2.0 MIN.
5.50.2 10.0 MAX.
1.0 MIN. 1.8 TYP.
Data Sheet D14473EJ3V1DS
7
2SK3402
* The information in this document is current as of October, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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